产品详情
- 27–31GHz operation
- 8 radiation elements
- 20ns typical 获得 and phase settling time
- 3° typical RMS phase error
- 0.4dB typical RMS 获得 error
- 35dB 获得 attenuation 范围
- 5-bit chip 地址
- Integrated PTAT with external biasing
- Internal temperature sensor
- Up to 50MHz SPI control
- Programmable on-chip memory
The F6502 is an 8-element transmitter silicon IC designed using a SiGe BiCMOS process for Ka-Band SATCOM (27 to 31GHz) phased array 应用s. The core IC has 6-bit phase control coupled with more than 35dB 获得 control on each channel to achieve fine beam 方向盘 and 获得 compensation between radiating elements. The device has 24dB nominal 获得 and 13dBm OP1dB. The core chip achieves an RMS phase error of 3° and RMS 获得 error of 0.4dB over the frequency of operation.
The chip operates at 2.1V to 2.5 V and 特征 ESD protection on all pins. The core design includes standard SPI protocol that operates up 50MHz with fast-beam switching, fast beam-状态 loading and fast four on-chip beam storage.
您还有其他问题吗？
我们致力于帮助您探索各种可能性，优化性能，并推动技术进步。立即联系我们！
与销售人员交谈